Multilevel Charge Storage in a Multiple Alloy Nanodot Memory
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概要
- 論文の詳細を見る
A multilevel charge storage in a multiple FePt alloy nanodot memory is investigated for the first time. It is demonstrated that the memory structure with multiple FePt nanodot layers effectively realizes a multilevel state by the adjustment of gate voltage. Metal oxide semiconductor (MOS) capacitors with four FePt nanodot layers as a floating gate are fabricated to evaluate the multilevel cell characteristic and reliability. Here, the effect of memory window for a nanodot diameter is also investigated, and it is found that a smaller dot size gives a larger window. From the results showing good endurance and retention characteristics for the multilevel states, it is expected that a multiple FePt nanodot memory using Fowler--Nordheim (FN) tunneling can be a candidate structure for the future multilevel NAND flash memory.
- 2011-09-25
著者
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Song Yun
Department Of Bio-materials Graduate School And Research Center For Proteineous Materials Chosun Uni
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Tanaka Tetsu
Department Of Quantum Materials Science University Of Tokushima
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Koyanagi Mitsumasa
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Song Yun
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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Lee Gae-Hun
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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Koyanagi Mitsumasa
Department of Bioengineering and Robotics, Tohoku University, Sendai 980-8578, Japan
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Bea Ji
Department of Bioengineering and Robotics, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan
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Lee Jung-Min
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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Bea Ji
Department of Bioengineering and Robotics, Tohoku University, Sendai 980-8578, Japan
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Tanaka Tetsu
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Tanaka Tetsu
Department of Bioengineering and Robotics, Tohoku University, Sendai 980-8578, Japan
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