Bidirectional Two-Terminal Switching Device for Non-Volatile Random Access Memory
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概要
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A two-terminal N+/P/N+ Si junction device that can replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque magnetic random access memory (STT-MRAM), by three-dimensional device simulation. An N+/P/N+ junction structure with 30\times 30 nm2 area provides sufficient bidirectional current flow to write data by a drain-induced barrier lowering (DIBL) under a reverse bias at the N+/P (or P/N+) junction, and high current on/off ratio of 10^{6}, which is acceptable for STT-MRAM. In this work, critical parameters such as P-length, P doping, and N+ doping are investigated to elucidate the optimal parameter condition in view of write current and current on/off ratio.
- 2012-04-25
著者
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Song Yun-Heub
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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Yang Hyung-Jun
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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Kil Gyu-Hyun
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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Lee Gae-Hun
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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Lee Seong-Hyun
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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