A Novel Structure for Beyond-45 nm NOR Flash Technology Featuring Short Channel Effect Immunity and Low Random Telegraph Signal Noise
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概要
- 論文の詳細を見る
We proposed a three-dimensional (3D) flash structure named recessed channel array transistor (RCAT), aiming to archive good short channel immunity and lower random telegraph signal (RTS). The results show that RCAT cell can keep a 110 nm effective gate length and consequently a punch-through voltage above 5 V even in 45 nm technology node. In RCAT cell, the RTS $V_{\text{th}}$ variation was reduced from 0.5 to 0.2 V compared with planar cell due to enlarged gate length and lower channel dopant concentration. These advantages of RCAT cell make it a promising structure for the continuous scaling of the NOR flash memories to 45 nm and beyond.
- 2008-12-25
著者
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KWON Wook
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Song Yun
Department Of Bio-materials Graduate School And Research Center For Proteineous Materials Chosun Uni
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Cai Yimao
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Song Yun
Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Shim Sang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
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Kwon Wook
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
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Shim Sang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
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Cai Yimao
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
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Cai Yimao
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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