KWON Wook | Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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概要
- 同名の論文著者
- Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.の論文著者
関連著者
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KWON Wook
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Kwon Wook
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
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Park Chan-kwang
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Cai Yimao
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Chan-Kwang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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Cai Yimao
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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KIM Dae
Korea institute for Advanced Study
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim Kinam
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Han Jee
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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HAN Jung
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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LEE Heon
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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SIM Sang-Pil
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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KIM Bomsoo
Korea Institute for Advanced Study
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BAEK Chang-Ki
Korea Institute for Advanced Study
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LEE Wook
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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JUNG Cheol
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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JANG Young
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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PARK Jeung
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Han Jung
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Song Yun
Department Of Bio-materials Graduate School And Research Center For Proteineous Materials Chosun Uni
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Kwon Wook
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Jung Cheol
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Jeung
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Sim Sang-pil
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kwon Wook-hyun
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Dae
Korea Atomic Energy Research Institute
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Lee Heon
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Jang Young
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Wook
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Song Yun
Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Song Yun
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
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Jang Younggoan
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
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Ryu Wonhyeng
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
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Shin Joongshik
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
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Shim Sang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
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Ryu Wonhyeng
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
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Park Chan-Kwang
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
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Kwon Wook
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
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Shim Sang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
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Cai Yimao
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
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Cai Yimao
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
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Jang Younggoan
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
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Shin Joongshik
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
著作論文
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- A Novel Structure for Beyond-45 nm NOR Flash Technology Featuring Short Channel Effect Immunity and Low Random Telegraph Signal Noise
- A Novel Body-Tied Fin Field Effect Transistor Flash Memory Structure with $\lambda$-Shaped Floating Gate for Sub 45 nm NOR Flash Memory