Cai Yimao | Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
スポンサーリンク
概要
- Cai Yimaoの詳細を見る
- 同名の論文著者
- Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Koreaの論文著者
関連著者
-
Cai Yimao
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
-
Cai Yimao
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Park Chan-Kwang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
-
Park Chan-kwang
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Kwon Wook
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
-
KWON Wook
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
Song Yun
Department Of Bio-materials Graduate School And Research Center For Proteineous Materials Chosun Uni
-
Song Yun
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
-
Jang Younggoan
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
-
Shin Joongshik
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
-
Ryu Wonhyeng
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
-
Lee Bong
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
-
Kwon Wook-Hyun
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
-
Jang Younggoan
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
-
Shin Joongshik
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
-
KWON Wook-Hyun
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
HAN Jung
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
LEE Bong
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
Han Jung
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Kwon Wook
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Kwon Wook-hyun
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
CAI Yimao
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
HEUB Song
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
Lee Bong
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Heub Song
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Song Yun
Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
-
Ryu Wonhyeng
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
-
Shim Sang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
-
Park Chan-Kwang
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
-
Kwon Wook
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
-
Shim Sang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
-
Cai Yimao
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
-
Cai Yimao
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu Yongin, Gyeonggi-do 446-711, Korea
著作論文
- The impact of RTS on the Vt variation of 65nm MLC NOR flash memory
- The Impact of Random Telegraph Signals on the Threshold Voltage Variation of 65 nm Multilevel NOR Flash Memory
- A Novel Structure for Beyond-45 nm NOR Flash Technology Featuring Short Channel Effect Immunity and Low Random Telegraph Signal Noise
- A Novel Body-Tied Fin Field Effect Transistor Flash Memory Structure with $\lambda$-Shaped Floating Gate for Sub 45 nm NOR Flash Memory
- Erratum: "A Novel Body-Tied Fin Field Effect Transistor Flash Memory Structure with $\lambda$-Shaped Floating Gate for Sub 45 nm NOR Flash Memory"