The Impact of Random Telegraph Signals on the Threshold Voltage Variation of 65 nm Multilevel NOR Flash Memory
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概要
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In this work, the threshold voltage ($V_{\text{t}}$) variation caused by random telegraph signals (RTS) in 65 nm multilevel (MLC) nor flash memory is discussed. The relationship of RTS amplitudes and the positions of the cells in the $V_{\text{t}}$ distribution is investigated by bit mapping test method, which shows that the channel dopant fluctuation aggravates the RTS impact on the cell’s $V_{\text{t}}$ control. Channel doping engineering is introduced to suppress RTS $V_{\text{t}}$ variation in 65 nm Nor MLC flash memory. As a result, the RTS $V_{\text{t}}$ variation is reduced from 0.50 to 0.26 V.
- 2008-04-25
著者
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Park Chan-kwang
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Song Yun
Department Of Bio-materials Graduate School And Research Center For Proteineous Materials Chosun Uni
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Cai Yimao
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Bong
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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Kwon Wook-Hyun
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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Park Chan-Kwang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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Cai Yimao
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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