KIM Bomsoo | Korea Institute for Advanced Study

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著作論文

Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
Design Technique for Ramped Gate Soft-Programming in Over-Erased NOR Type Flash EEPROM Cells
High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
Design Technique for Ramped Gate Soft-Programming in Over-Erased NOR Type Flash EEPROM Cells
High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects

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