SONG Yunheub | Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd.
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概要
関連著者
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QUAN Wu-yun
Korea institute for Advanced Study
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KIM Bomsoo
Korea Institute for Advanced Study
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BAEK Chang-Ki
School of Electrical Engineering and Computer Science and Nano-Systems Institute (NSI-NCRC), Seoul N
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SONG Yunheub
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd.
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KIM Dae
Korea institute for Advanced Study
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Park Young
School Of Mechanical Engineering Yonsei University
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Park Y
School Of Electrical Engineering And Computer Science And Isrc Seoul National University
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Kim Dae
Korea Atomic Energy Research Institute
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Min Hong
School Of Electrical Engineering And Computer Science And Isrc Seoul National University
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Min Hong
School Of Electrical Engineering & Isrc Seoul National University
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Kim D
Korea Institute For Advanced Study
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Park Young
School Of Electrical And Computer Engineering Sungkyunkwan University
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Baek Chang-Ki
School of Electrical Engineering and Computer Science, and ISRC, Seoul National University, P.O. Box 34 Kwanak, Seoul 151-744, Korea
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Song Yunheub
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd., Kyungki-Do 449-900, Korea
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Park Young
School of Electrical Engineering and Computer Science, and ISRC, Seoul National University, P.O. Box 34 Kwanak, Seoul 151-744, Korea
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Min Hong
School of Electrical Engineering and Computer Science, and ISRC, Seoul National University, P.O. Box 34 Kwanak, Seoul 151-744, Korea
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Kim Bomsoo
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
著作論文
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects