Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_<ot> vs. Oxide Processing

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• KIM Dae

  Korea institute for Advanced Study

• Han In-Shik

  Dept. of Electronics Engineering, Chungnam National University

• GOO Tae-Gyu

  Dept. of Electronics Engineering, Chungnam National University

• LEE Heui-Seung

  Magnachip Semiconductor Inc.

• LEE Hi-Deok

  Department of Electronics Engineering, Chungnam National University

• Lee H‐j

  Dept. Of Electronics Engineering Chungnam National University

• Lee Hi-deok

  R&d Division Lg Semicon Co. Ltd.

• Lee Hi-deok

  Department Of Electronics Engineering Chungnam National University

• Lee H‐j

  Magnachip Semiconductor Inc.

• Han In-shik

  Dept. Of Electronics Engineering Chungnam National University

• KIM Bomsoo

  Korea Institute for Advanced Study

• BAEK Chang-Ki

  Korea Institute for Advanced Study

• SON Younghwan

  Department of Electronics Engineering, Chungnam National University

• HAN In-Shik

  Department of Electronics Engineering, Chungnam National University

• GOO Tae-Gyu

  Department of Electronics Engineering, Chungnam National University

• Kim Dae

  Magnachip Semiconductor Inc.

• Lee H‐d

  Chungnam National Univ. Taejon Kor

• Han In-shik

  Department Of Electronics Engineering Chungnam National University

• Kim Dae

  Korea Atomic Energy Research Institute

• Song Yunheub

  Department Of Electronics Engineering Chungnam National University

• Kim D

  Korea Institute For Advanced Study

• Kim Dae-byung

  Dept. Of Materials Engineering Korea University Of Technology And Education

• Son Younghwan

  Department Of Electronics Engineering Chungnam National University

• Goo Tae-gyu

  Dept. Of Electronics Engineering Chungnam National University

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