Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron Trapping
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概要
- 論文の詳細を見る
Unique features of the threshold voltage shift, $\Delta V_{\text{TH}}$ and the source current, $I_{\text{S}}$ in SONOS cells are quantified, utilizing the concept of trapped and localized electron charge, $Q_{\text{T}}$. Dependence of $\Delta V_{\text{TH}}$ on forward and reverse readings, and on drain or source voltages are systematically analyzed for a given programming condition. Also constant transient $I_{\text{S}}$ during the programming is elucidated. The analysis is based upon embedding localized $Q_{\text{T}}$ in, and solving the coupled Poisson and continuity equations. As a consequence, $Q_{\text{T}}$ profiles diffusing progressively in time into the channel from its drain end is quantified. The technique for extracting the trap density and studying the cell reliability has been developed.
- Japan Society of Applied Physicsの論文
- 2004-12-15
著者
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BAEK Chang-Ki
Korea Institute for Advanced Study
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Kim Dae
Korea Atomic Energy Research Institute
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Kwon Wookhyun
Memory Division Semiconductor Business Samsung Electronics Company Ltd.
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KIM Bomsoo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
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LEE Jawoong
Korea Institute for Advanced Study
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Jeong Yoon-ha
Department Of Electrical And Electronic Engineering Pohang University Of Science And Technology
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Baek Chang-Ki
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
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Jeong Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang, 790-784, Korea
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Kim Bomsoo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang, 790-784, Korea
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Kim Dae
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
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Kwon Wookhyun
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd., Kyungki-Do, 449-900, Korea
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Jeong Yoon-Ha
Department of Creative IT Excellence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea
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