Effects of Sulfide Passivation on the Performance of GaAs MISFETs with Photo-CVD Grown P_3N_5 Gate Insulators
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概要
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Accumulation-mode and depletion-mode GaAs metal-insulator-semiconductor field-effect transistors (MISEETs), with sulfur-treatment and a photochemical vapor-deposited-P_3N_5 gate insulator, have been successfully fabricated. The devices have good linearity, low hysteresis in current-voltage characteristics, and the instability of the current less than 22 percent for the period of 1.0-1.0×10^4 s. The effective electron mobility and extrinsic transconductance of the FETs at room temperature are about 1300 cm^2/V・s and 1.41 mS/mm for the accumulation-mode, and about 4500 cm^2/V・s and 4 mS/mm for the depletion-mode, respectively. Capacitance-voltage (C-V) characteristics and Auger electron spectroscopy (AES) analysis for different sulfur-treatment conditions are discussed. The atomic concentration ratios of sulfur and oxygen to arsenide on GaAs surfaces and GaAs metal-insulator-semiconductor (MIS) inaterface properties are critically dependent on sulfur pretreatment conditions, and the optimum sulfur-treatment temperature is determined to be about 40℃. The minimum density of interface trap states for an Al/P_3N_5/GaAs MIS diode with the optimized surface treatment is about 4.3 ×10^<10>cm^<-2> eV^<-1>.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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JEONG Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
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JO Seong-Kue
Department of Electronic and Electrical Engineering and Microwave Application Research Center, Pohan
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Jo Seong-kue
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Jo Seong-kue
Department Of Electronic And Electrical Engineering And Microwave Application Research Center Pohang
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Kang Bongkoo
Department Of Electrical Engineering Pohang University Of Science And Technology
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Kang Bongkoo
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Choi Ki-Hwan
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
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Choi Ki-hwan
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Jeong Yoon-ha
Department Of Electrical And Electronic Engineering Pohang University Of Science And Technology
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Jeong Yoon-Ha
Department of Creative IT Excellence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea
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