Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells : Optimized Erase and Cell Shrinkage
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-12-15
著者
-
KIM Dae
Korea institute for Advanced Study
-
Jeong Y‐h
Pohang Univ. Sci. And Technol. Kyungpook Kor
-
BAEK Chang-Ki
Korea Institute for Advanced Study
-
JEONG Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
Jeong Yoon-ha
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
-
Kim Dae
Magnachip Semiconductor Inc.
-
Kim Dae
Korea Atomic Energy Research Institute
-
Kwon Wookhyun
Memory Division Semiconductor Business Samsung Electronics Company Ltd.
-
KIM Bomsoo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
Kim D
Korea Institute For Advanced Study
-
Kim Dae-byung
Dept. Of Materials Engineering Korea University Of Technology And Education
-
Jeong Yoon-ha
Department Of Electrical And Electronic Engineering Pohang University Of Science And Technology
-
Jeong Yoon-Ha
Department of Creative IT Excellence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea
関連論文
- A New Quantum Effect in Metal-Oxide-Semiconductor Field-Effect Transistor : Threshold Voltage Creep with Gate Voltage
- New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET's
- Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
- Design Considerations for Low-Power Single-Electron Transistor Logic Circuits
- ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
- ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
- Effects of Sulfide Treatment on InP Metal-Insulator-Semiconductor Devices with Photochemical Vapor Deposit P_3N_5 Gate Insulators
- Thermal Properties at the Commensurate-Incommensurate Transition of K_2ZnCl_4
- Enhanced Current-Voltage Characteristics of Al_Ga_As/In_Ga_As/GaAs P-HEMTs Using an Inverted Double Channel Structure
- AlInAs/InP Delta-Doped Channel Field Effect Transistor Grown by Organometallic Chemical Vapor Deposition
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
- Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells : Optimized Erase and Cell Shrinkage
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell : Effects of Localized Electron Trapping
- Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-Electron Transistors
- Effects of Sulfide Passivation on the Performance of GaAs MISFETs with Photo-CVD Grown P_3N_5 Gate Insulators
- Optically Detected Resonance Studies of Neutral and Negatively Charged Donors in GaAs/AlGaAs Quantum Well Structures
- ICONE11-36500 SHAPE OPTIMIZATION OF SPACER GRID SPRINGS TO SUPPORT NUCLEAR FUEL RODS
- An Approach to Extract Extrinsic Parameters of HEMTs
- Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the $Y$-Function Technique
- Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron Trapping
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
- Optically Detected Resonance Studies of Neutral and Negatively Charged Donors in GaAs/AlGaAs Quantum Well Structures