ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors

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概要

• 論文の詳細を見る

• We present a simulation of a novel single electron transistor(SET) on silicon-on-insulator(SOI) substrate, having a single gate. The proposed structure is identical to the lightly doped drain(LDD) MOSFETs, with the exception of no-doped LDD region. By applying a gate voltage, a Coulomb island is formed under the gate and the region beneath the sidewall spacer acts as a tunnel barrier. Considering tunnel resistances and barrier heights, we optimized the channel doping concentration and length of sidewall spacer at 3×10^<18>/cm^3, 15nm respectively. Simulation results show that the total capacitance of the SET is about 1.73aF, with the gate length of 10nm. Because of its simple structure, it is suitable for fabricating integrated circuits.

• 社団法人電子情報通信学会の論文
• 2000-06-21

著者

• Lee B‐h

  Dongguk Univ. Seoul Kor

• Jeong M‐y

  Electrical And Computer Engineering Division Pohang University Of Science And Technology

• Jeong Y‐h

  Pohang Univ. Sci. And Technol. Kyungpook Kor

• JEONG Yoon-Ha

  Department of Electronic and Electrical Engineering, Pohang University of Science and Technology

• Jeong Yoon-ha

  Electrical And Computer Engineering Division Pohang University Of Science And Technology

• Lee Bong-Hoon

  Department of Electrical and Electronic Engineering Pohang University of Science and Technology

• Jeong Moon-Young

  Department of Electrical and Electronic Engineering Pohang University of Science and Technology

• Jeong Yoon-ha

  Department Of Electrical And Electronic Engineering Pohang University Of Science And Technology

• Jeong Yoon-Ha

  Department of Creative IT Excellence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea

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• Design Considerations for Low-Power Single-Electron Transistor Logic Circuits
• ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
• ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
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