Effects of Sulfide Treatment on InP Metal-Insulator-Semiconductor Devices with Photochemical Vapor Deposit P_3N_5 Gate Insulators
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-10-15
著者
-
Lee B‐h
Dongguk Univ. Seoul Kor
-
Jeong M‐y
Electrical And Computer Engineering Division Pohang University Of Science And Technology
-
Jeong Y‐h
Pohang Univ. Sci. And Technol. Kyungpook Kor
-
JEONG Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
SUGANO Takuo
Laboratory for Quantum Materials, Frontier Research Program, Institute of Physical and Chemical Rese
-
Jeong Yoon-ha
Electrical And Computer Engineering Division Pohang University Of Science And Technology
-
Lee Bong-Hoon
Department of Electrical and Electronic Engineering Pohang University of Science and Technology
-
Jeong Moon-Young
Department of Electrical and Electronic Engineering Pohang University of Science and Technology
-
JO Seong-Kue
Department of Electronic and Electrical Engineering and Microwave Application Research Center, Pohan
-
Jo Seong-kue
Department Of Electronic And Electrical Engineering And Microwave Application Research Center Pohang
-
Sugano Takuo
Laboratory For Nano-electronics Materials Frontier Materials Research Program The Institute Of Physi
-
Jeong Yoon-ha
Department Of Electrical And Electronic Engineering Pohang University Of Science And Technology
-
Jeong Yoon-Ha
Department of Creative IT Excellence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea
関連論文
- A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
- Design Considerations for Low-Power Single-Electron Transistor Logic Circuits
- ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
- ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
- Effects of Sulfide Treatment on InP Metal-Insulator-Semiconductor Devices with Photochemical Vapor Deposit P_3N_5 Gate Insulators
- Alignment Control of a Liquid Crystal on a Photosensitive Polyvinylalcohol Film
- Thermal Properties at the Commensurate-Incommensurate Transition of K_2ZnCl_4
- Enhanced Current-Voltage Characteristics of Al_Ga_As/In_Ga_As/GaAs P-HEMTs Using an Inverted Double Channel Structure
- AlInAs/InP Delta-Doped Channel Field Effect Transistor Grown by Organometallic Chemical Vapor Deposition
- Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells : Optimized Erase and Cell Shrinkage
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell : Effects of Localized Electron Trapping
- Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-Electron Transistors
- Effects of Sulfide Passivation on the Performance of GaAs MISFETs with Photo-CVD Grown P_3N_5 Gate Insulators
- Optically Detected Resonance Studies of Neutral and Negatively Charged Donors in GaAs/AlGaAs Quantum Well Structures
- An Approach to Extract Extrinsic Parameters of HEMTs
- Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron Trapping
- Design Considerations for Low-Power Single-Electron Transistor Logic Circuits
- Optically Detected Resonance Studies of Neutral and Negatively Charged Donors in GaAs/AlGaAs Quantum Well Structures