AlInAs/InP Delta-Doped Channel Field Effect Transistor Grown by Organometallic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-02-01
著者
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Jeong D‐h
Pohang Univ. Sci. And Technol. (postech) Pohang Kor
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JEONG Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
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Hayes J
Bellcore 331 Newman Springs Rd. Red Bank
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Jeong Yoon-ha
Department Of Electronic And Electrical Engineering Pohang Institute Of Science And Technology
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Caneau Catherine
Bellcore 331 Newman Springs Rd. Red Bank
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JEONG Dong-Ho
Department of Electronic and Electrical Engineering, Pohang Institute of Science and Technology
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HONG Won-Pyo
Bellcore, 331 Newman Springs Rd. Red Bank
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BHAT Raje
Bellcore, 331 Newman Springs Rd. Red Bank
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HAYES John
Bellcore, 331 Newman Springs Rd. Red Bank
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Bhat Raje
Bellcore 331 Newman Springs Rd. Red Bank
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Hong Won-pyo
Bellcore 331 Newman Springs Rd. Red Bank
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Jeong Yoon-ha
Department Of Electrical And Electronic Engineering Pohang University Of Science And Technology
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Jeong Dong-ho
Department Of Electronic And Electrical Engineering Pohang Institute Of Science And Technology
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Jeong Yoon-Ha
Department of Creative IT Excellence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea
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- Effects of Sulfide Treatment on InP Metal-Insulator-Semiconductor Devices with Photochemical Vapor Deposit P_3N_5 Gate Insulators
- Enhanced Current-Voltage Characteristics of Al_Ga_As/In_Ga_As/GaAs P-HEMTs Using an Inverted Double Channel Structure
- AlInAs/InP Delta-Doped Channel Field Effect Transistor Grown by Organometallic Chemical Vapor Deposition
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