Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell : Effects of Localized Electron Trapping

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-12-15

著者

• KIM Dae

  Korea institute for Advanced Study

• Jeong Y‐h

  Pohang Univ. Sci. And Technol. Kyungpook Kor

• BAEK Chang-Ki

  Korea Institute for Advanced Study

• JEONG Yoon-Ha

  Department of Electronic and Electrical Engineering, Pohang University of Science and Technology

• Kwon Wookhyun

  Memory Division Semiconductor Business Samsung Electronics Company Ltd.

• KIM Bomsoo

  Department of Electronic and Electrical Engineering, Pohang University of Science and Technology

• LEE Jawoong

  Korea Institute for Advanced Study

• Kim D

  Korea Institute For Advanced Study

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