Kwon Wookhyun | Memory Division Semiconductor Business Samsung Electronics Company Ltd.
スポンサーリンク
概要
関連著者
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BAEK Chang-Ki
Korea Institute for Advanced Study
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Kwon Wookhyun
Memory Division Semiconductor Business Samsung Electronics Company Ltd.
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KIM Bomsoo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
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KIM Dae
Korea institute for Advanced Study
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Jeong Y‐h
Pohang Univ. Sci. And Technol. Kyungpook Kor
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JEONG Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
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Kim Dae
Korea Atomic Energy Research Institute
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LEE Jawoong
Korea Institute for Advanced Study
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Kim D
Korea Institute For Advanced Study
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Jeong Yoon-ha
Department Of Electrical And Electronic Engineering Pohang University Of Science And Technology
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Jeong Yoon-Ha
Department of Creative IT Excellence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea
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Jeong Yoon-ha
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Kim Dae
Magnachip Semiconductor Inc.
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Kim Dae-byung
Dept. Of Materials Engineering Korea University Of Technology And Education
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Baek Chang-Ki
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
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Jeong Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang, 790-784, Korea
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Kim Bomsoo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang, 790-784, Korea
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Kim Dae
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
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Kwon Wookhyun
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd., Kyungki-Do, 449-900, Korea
著作論文
- Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells : Optimized Erase and Cell Shrinkage
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell : Effects of Localized Electron Trapping
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron Trapping