A New Quantum Effect in Metal-Oxide-Semiconductor Field-Effect Transistor : Threshold Voltage Creep with Gate Voltage
スポンサーリンク
概要
- 論文の詳細を見る
- 2002-07-15
著者
-
QUAN Wu-yun
Korea institute for Advanced Study
-
KIM Dae
Korea institute for Advanced Study
-
KIM Youn-Jang
Hyundai Electronics Co., Ltd.
-
Kim Y‐j
Yonsei Univ. Seoul Kor
-
Kim Dae
Korea Atomic Energy Research Institute
-
Kim Youn-jang
Hyundai Electronics Co. Ltd.
関連論文
- A New Quantum Effect in Metal-Oxide-Semiconductor Field-Effect Transistor : Threshold Voltage Creep with Gate Voltage
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
- Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells : Optimized Erase and Cell Shrinkage
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell : Effects of Localized Electron Trapping
- ICONE11-36500 SHAPE OPTIMIZATION OF SPACER GRID SPRINGS TO SUPPORT NUCLEAR FUEL RODS
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron Trapping
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects