Design Considerations for Low-Power Single-Electron Transistor Logic Circuits
スポンサーリンク
概要
- 論文の詳細を見る
We have investigated design considerations for low-power single-electron transistor (SET) logic circuits. Supply-voltage scaling is introduced as a method for reducing the power consumption of SET circuits. A detailed analysis of the effects of supply-voltage scaling is given on the basis of the behavior of a complementary capacitively coupled SET inverter circuit. It has been shown that the hysteresis caused by the supply-voltage-dependent threshold voltage of a SET quickly disappears as the temperature rises, and does not ruin the desired inverting operation at a practical operation temperature. Also shown is the considerable impact of the supply-voltage scaling on reducing the power expended by leakage and short-circuit. From the results of power-delay product and delay time, it has been shown that the supply-voltage scaling should be carried out within 20% of maximum supply-voltage to maintain overall circuit performance.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
-
Jeong Yoon-ha
Electrical And Computer Engineering Division Pohang University Of Science And Technology
-
Lee Bong-hoon
Electrical And Computer Engineering Division Pohang University Of Science And Technology
-
Jeong Moon-young
Electrical And Computer Engineering Division Pohang University Of Science And Technology
-
Jeong Moon-Young
Electrical and Computer Engineering Division, Pohang University of Science and Technology, San-31, Hyoja-dong, Nam-ku, Pohang, Kyungbuk 790-784, Korea
-
Jeong Yoon-Ha
Electrical and Computer Engineering Division, Pohang University of Science and Technology, San-31, Hyoja-dong, Nam-ku, Pohang, Kyungbuk 790-784, Korea
-
Lee Bong-Hoon
Electrical and Computer Engineering Division, Pohang University of Science and Technology, San-31, Hyoja-dong, Nam-ku, Pohang, Kyungbuk 790-784, Korea
関連論文
- Design Considerations for Low-Power Single-Electron Transistor Logic Circuits
- ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
- ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
- Effects of Sulfide Treatment on InP Metal-Insulator-Semiconductor Devices with Photochemical Vapor Deposit P_3N_5 Gate Insulators
- Design Considerations for Low-Power Single-Electron Transistor Logic Circuits