Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-01-15

著者

• YUN Jang-Gn

  Department of Electronics Engineering, Chungnam National University

• OH Soon-Young

  Department of Electronics Engineering, Chungnam National University

• JI Hee-Hwan

  Department of Electronics Engineering, Chungnam National University

• HUANG Bin-Feng

  Department of Electronics Engineering, Chungnam National University

• WANG Jin-Suk

  Department of Electronics Engineering, Chungnam National University

• PARK Seong-Hyung

  System IC R&D Center, Hynix Semiconductor Inc.

• LEE Hi-Deok

  Department of Electronics Engineering, Chungnam National University

• Huang Bin

  Department Of Electronics Engineering Chungnam National University

• Wang Jin

  Dept. Of Electronics Engineering Chungnam National University

• Park Seong-hyun

  Magnachip Semiconductor Inc.

• Lee H‐j

  Magnachip Semiconductor Inc.

• Bae Mi-suk

  Department Of Electronics Engineering Chungnam National University

• LEE Hun-Jin

  Department of Electronics Engineering, Chungnam National University

• Park Seong-hyung

  Lg Semicon. Ltd.

関連論文

• Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
• New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET's
• Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
• Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
• Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
• Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
• Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
• Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
• Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
• Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors
• Characterization of the Co-Silicide Penetration Depth into the Junction Area
• Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
• Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications
• Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
• Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
• Novel Nitrogen doped Ni SALICIDE Process for Nano-Scale CMOS Technology
• Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology
• Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Optical Gain Calculation for Strained Quantum Well Lasers by the Fourier Expansion Method
• Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well : Optics and Quantum Electronics
• Screening Effects on Electron-Longitudinal Optical-Phonon Intersubband Scattering in Wide Quantum Well and Comparison with Experiment
• Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
• Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs(Session B6 Si-Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs(Session B6 Si-Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure
• Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications
• Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
• Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology

もっと見る 閉じる

スポンサーリンク