Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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YUN Jang-Gn
Department of Electronics Engineering, Chungnam National University
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OH Soon-Young
Department of Electronics Engineering, Chungnam National University
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JI Hee-Hwan
Department of Electronics Engineering, Chungnam National University
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HUANG Bin-Feng
Department of Electronics Engineering, Chungnam National University
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WANG Jin-Suk
Department of Electronics Engineering, Chungnam National University
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LEE Hi-Deok
Department of Electronics Engineering, Chungnam National University
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Kim Yong-Jin
Department of Internal Medicine, Cardiovascular Center, Seoul National University Hospital
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Huang Bin
Department Of Electronics Engineering Chungnam National University
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Wang Jin
Dept. Of Electronics Engineering Chungnam National University
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Kim Ui
R&d Center Magnachip Semiconductor Ltd.
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Huh Sang
R&d Center Magnachip Semiconductor Ltd.
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Cha Han
R&d Center Magnachip Semiconductor Ltd.
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Lee J‐g
System Ic R & D Division Hynix Semiconductor Inc.
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Lee H‐j
Magnachip Semiconductor Inc.
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Kim Y‐j
Magnachip Semiconductor Inc.
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KIM Ui-Sik
R&D Center, MagnaChip Semiconductor Ltd.
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CHA Han-Seob
R&D Center, MagnaChip Semiconductor Ltd.
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HEO Sang-Bum
R&D Center, MagnaChip Semiconductor Ltd.
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LEE Jeong-Gun
R&D Center, MagnaChip Semiconductor Inc.
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