Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology

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概要

• 論文の詳細を見る

• In this paper, 1%-nitrogen doped nickel was proposed to improve the thermal stability of Ni-silicide for nano-scale N-type Metal Oxide Semiconductor Field Effect Transistor. It is shown that thermal stability of nickel silicide is improved a lot by the Nitrogen incorporation in NiSi layer using the 1%-nitrogen doped nickel target. Even after post-silicidation annealing at 650°C for 30 min, the low resistivity NiSi with low junction leakage current can be achieved. Moreover, improved device characteristics such as threshold voltage, transconductance, and on-off current, subthreshold slope were obtained in 80 nm NMOSFET.

• 2005-04-15

著者

• YUN Jang-Gn

  Department of Electronics Engineering, Chungnam National University

• OH Soon-Young

  Department of Electronics Engineering, Chungnam National University

• HUANG Bin-Feng

  Department of Electronics Engineering, Chungnam National University

• Kim Yong-Jin

  Department of Internal Medicine, Cardiovascular Center, Seoul National University Hospital

• Lee Hi-deok

  Department Of Electronics Engineering Chungnam National University

• Wang Jin-suk

  Department Of Electronics Engineering Chungnam National University

• KIM Ui-Sik

  R&D Center, MagnaChip Semiconductor Ltd.

• CHA Han-Seob

  R&D Center, MagnaChip Semiconductor Ltd.

• HEO Sang-Bum

  R&D Center, MagnaChip Semiconductor Ltd.

• LEE Jeong-Gun

  R&D Center, MagnaChip Semiconductor Inc.

• Ji Hee-hwan

  Department Of Electronics Engineering Chungnam National University

• Heo Sang-Bum

  R&D Center, MagnaChip Semiconductor Inc., Hyangjeong, Hungduk-Gu, Cheongju, Choongbuk 361-725, Korea

• Lee Jeong-Gun

  R&D Center, MagnaChip Semiconductor Inc., Hyangjeong, Hungduk-Gu, Cheongju, Choongbuk 361-725, Korea

• Kim Yong-Jin

  Department of Electronics Engineering, Chungnam National University, 220 Gung-Dong, Yuseong-gu, Daejeon 305-764, Korea

• Kim Ui-Sik

  R&D Center, MagnaChip Semiconductor Inc., Hyangjeong, Hungduk-Gu, Cheongju, Choongbuk 361-725, Korea

• Yun Jang-Gn

  Department of Electronics Engineering, Chungnam National University, 220 Gung-Dong, Yuseong-gu, Daejeon 305-764, Korea

• Cha Han-Seob

  R&D Center, MagnaChip Semiconductor Inc., Hyangjeong, Hungduk-Gu, Cheongju, Choongbuk 361-725, Korea

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