Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• WANG Jin-Suk

  Department of Electronics Engineering, Chungnam National University

• Wang Jin-suk

  Department Of Electronics Engineering Chungnam National University

• KIM Do-Woo

  Department of Digital Design, Korea Women's Polytechnic

• GONG Myeong-Kook

  R&D Center, Optoway, Inc.

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• Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
• Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure
• Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications
• Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
• Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
• Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure

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