Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-10-15
著者
-
Park S‐h
Magnachip Semiconductor Inc.
-
JI Hee-Hwan
Magnachip Semiconductor Inc.
-
LEE Heui-Seung
Magnachip Semiconductor Inc.
-
YUN Jang-Gn
Department of Electronics Engineering, Chungnam National University
-
OH Soon-Young
Department of Electronics Engineering, Chungnam National University
-
JI Hee-Hwan
Department of Electronics Engineering, Chungnam National University
-
HUANG Bin-Feng
Department of Electronics Engineering, Chungnam National University
-
PARK Young-Ho
Department of Electronics Engineering, Chungnam National University
-
WANG Jin-Suk
Department of Electronics Engineering, Chungnam National University
-
PARK Seong-Hyung
System IC R&D Center, Hynix Semiconductor Inc.
-
BAE Tae-Sung
Korea Basic Science Institute
-
LEE Hi-Deok
Department of Electronics Engineering, Chungnam National University
-
Yun Jang‐gn
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
-
Huang Bin
Department Of Electronics Engineering Chungnam National University
-
Lee Hi-deok
Department Of Electronics Engineering Chungnam National University
-
Wang Jin
Dept. Of Electronics Engineering Chungnam National University
-
Wang Jin-suk
Department Of Electronics Engineering Chungnam National University
-
Park Young-ho
Department Of Electronics Engineering Chungnam National University
-
Park Seong-hyun
Magnachip Semiconductor Inc.
-
Lee H‐j
Magnachip Semiconductor Inc.
-
Ji Hee
Dept. Of Electronics Engineering Chungnam National University
-
Ji Hee
Magnachip Semiconductor Inc.
-
Park Seong-hyung
Lg Semicon. Ltd.
-
Yun Jang
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
-
Park Seong-hyung
System Ic R&d Division Hynix Semiconductor
-
Park Si-ho
Chebigen Inc. 350-b. Chungmugwan Sejong University
-
Oh Soon
Dept. Of Electronics Engineering Chungnam National University
-
Ji Hee-hwan
Department Of Electronics Engineering Chungnam National University
関連論文
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
- Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2)
- Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
- Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
- New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET's
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
- Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
- Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_Ge_x according to Different Ge Fractions (x)
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1)
- Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2)
- Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1)
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)
- Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors
- Characterization of the Co-Silicide Penetration Depth into the Junction Area
- Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
- 3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Multi-level reading method by using PCI (Paired Cell Interference) in vertical NAND flash memory
- Multi-level reading method by using PCI (Paired Cell Interference) in vertical NAND flash memory
- Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology
- Fabrication of Two-Layer stacked Poly-Si TFT CMOS Inverters Using Laser Crystallized channel with metal gate on Si Substrate
- Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications
- Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Novel Nitrogen doped Ni SALICIDE Process for Nano-Scale CMOS Technology
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology
- Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices(Novel MOSFET Structures,Fundamentals and Applications of Advanced Semiconductor Devices)
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles
- Optical Gain Calculation for Strained Quantum Well Lasers by the Fourier Expansion Method
- Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well : Optics and Quantum Electronics
- Screening Effects on Electron-Longitudinal Optical-Phonon Intersubband Scattering in Wide Quantum Well and Comparison with Experiment
- Extended word-Line NAND flash memory
- Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
- Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme
- Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI)
- New Hardware Architecture for Multiplication over GF(2^m) and Comparisons with Normal and Polynomial Basis Multipliers for Elliptic Curve Cryptography
- Is there a role for magnetic resonance imaging in renal trauma?
- Two cases of perineal ectopic testis
- Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
- Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs(Session B6 Si-Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs(Session B6 Si-Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Design and Simulation of Asymmetric MOSFETs(Junction Formation and TFT Reliability,Fundamentals and Applications of Advanced Semiconductor Devices)
- Novel Gate-All-Around MOSFETs with Self-Aligned Structure
- Multi-Functionality of Novel Structured Tunneling Devices
- Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure
- Diallel Analysis of Plant and Ear Heights in Tropical Maize (Zea mays L.)
- Potent Cytotoxic Effects of Novel Retinamide Derivatives in Ovarian Cancer Cells(Medicinal Chemistry)
- Design and Simulation of Asymmetric MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
- Design and Simulation of Asymmetric MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
- Design and Simulation of Asymmetric MOSFETs
- Synthesis and Biological Activity of Novel Retinamide and Retinoate Derivatives
- Conduction Mechanism and Reliability Characteristics of a Metal--Insulator--Metal Capacitor with Single ZrO2 Layer
- 4-bit FinFET SONOS flash memory: Optimization of structure and 3D numerical simulation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 4-bit FinFET SONOS flash memory: Optimization of structure and 3D numerical simulation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications
- Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
- Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering
- Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: s
- Effects of a SiO_2 Capping Layer on the Electrical Properties and Morphology of Nickel Silicides
- Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
- Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
- Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory
- Electrical Characteristic Analysis of Postannealed ZnO Thin-Film Transistors under O Ambient (Special Issue : Advanced Electromaterials)
- Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor’s
- Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer
- Erratum: ``Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2''
- Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2
- Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- Electrical Instabilities in Amorphous InGaZnO Thin Film Transistors with Si3N4 and Si3N4/Al2O3 Gate Dielectrics
- Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO_2 and S_3N_4 as Trapping Layer
- New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure
- Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device
- Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology
- Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime
- Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device
- Investigation of the Gate Bias Stress Instability in ZnO Thin Film Transistors by Low-Frequency Noise Analysis (Special Issue : Solid State Devices and Materials)
- Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
- Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure