Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

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概要

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• In this paper, two kinds of multilayered metal--insulator--metal (MIM) capacitors using Al2O3/HfO2/Al2O3 (AHA) and SiO2/HfO2/SiO2 (SHS) were fabricated and characterized for radio frequency (RF) and analog mixed signal (AMS) applications. The experimental results indicate that the AHA MIM capacitor (8.0 fF/μm2) is able to provide a higher capacitance density than the SHS MIM capacitor (5.1 fF/μm2), while maintaining a low leakage current of about 50 nA/cm2 at 1 V. The quadratic voltage coefficient of capacitance, \alpha gradually decreases as a function of stress time under constant voltage stress (CVS). The parameter variation of SHS MIM capacitors is smaller than that of AHA MIM capacitors. The effects of CVS on voltage linearity and time-dependent dielectric breakdown (TDDB) characteristics were also investigated.

• 2011-10-25

著者

• Lee Hi-deok

  Department Of Electronics Engineering Chungnam National University

• Han In-shik

  Department Of Electronics Engineering Chungnam National University

• Kwon Hyuk-Min

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Park Sang-Uk

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Jung Yi-Jung

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Kang Chang-Yong

  International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.

• Lee Byoung-Hun

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea

• Jammy Raj

  International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.

• Jammy Raj

  International SEMATECH, Austin, TX 78741, U.S.A.

• Kwak Ho-Young

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Choi Woon-Il

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Ha Man-Lyun

  Dongbu HiTec Semiconductor Inc., Seoul 891-10, Korea

• Lee Ju-Il

  Dongbu HiTec Semiconductor Inc., Seoul 891-10, Korea

• Kang Chang-Yong

  International SEMATECH, Austin, TX 78741, U.S.A.

• KWON Hyuk-Min

  Department of Electronics Engineering, Chungnam National University

• KWAK Ho-Young

  Department of Electronics Engineering, Chungnam National University

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• Erratum: ``Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2''
• Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2
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