Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime
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概要
- 論文の詳細を見る
A novel back end-of-line (BEOL) process scheme is proposed to improve negative bias temperature instability (NBTI) characteristics through the characterization of the impact of each BEOL process on NBTI of p+ gate metal oxide semiconductor field-effect transistor (PMOSFETs). It is demonstrated that NBTI is strongly dependent on the plasma enhanced nitride (PE-SiN) passivation film and H2 sintering anneal. A new process scheme of N2 annealing instead of H2 annealing prior to PE-SiN deposition is proposed and proven to be highly efficient in improving NBTI without degradation of device performance and n+ gate metal oxide semiconductor (NMOS) hot carrier lifetime.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
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Lee Hi-deok
Department Of Electronics Engineering Chungnam National University
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Han In-shik
Department Of Electronics Engineering Chungnam National University
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Lee Hi-Deok
Department of Electronics Engineering, Chungnam National University, Yusong-gu, Daejeon 305-764, Korea
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Ho Won-Joon
Technology Division, MagnaChip Semiconductor, Hungduk-gu, Cheongju 361-725, Korea
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Park Sung-Hyung
Technology Division, MagnaChip Semiconductor, Hungduk-gu, Cheongju 361-725, Korea
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Kim Dong-Sun
Technology Division, MagnaChip Semiconductor, Hungduk-gu, Cheongju 361-725, Korea
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Kim Jae-Yeong
Technology Division, MagnaChip Semiconductor, Hungduk-gu, Cheongju 361-725, Korea
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Park Yu-Be
Technology Division, MagnaChip Semiconductor, Hungduk-gu, Cheongju 361-725, Korea
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Kim Dae-Byung
Technology Division, MagnaChip Semiconductor, Hungduk-gu, Cheongju 361-725, Korea
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Han In-Shik
Department of Electronics Engineering, Chungnam National University, Yusong-gu, Daejeon 305-764, Korea
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