Conduction Mechanism and Reliability Characteristics of a Metal--Insulator--Metal Capacitor with Single ZrO2 Layer

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概要

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• In this paper, the electrical characteristics and reliability of ZrO2-based metal--insulator--metal (MIM) capacitors are investigated. High capacitance density of 15.3 fF/μm2 was achieved for ZrO2 MIM capacitors, which is acceptable for the reported MIM capacitors. Schottky emission at the low field region is not a dominant mechanism, and Frenkel--Poole emission is the dominant mechanism at the high electric field region. The extracted dynamic constant and trap energy level were 4.013 and 0.963 eV, respectively. The reduced trap energy level with increasing electric field is due to a rise in the field-induced barrier-lowering effect. The variation of $\alpha$ as a function of stress time under constant voltage stress (CVS) gradually decreases, while the variation of $\Delta C_{\text{stress}}/C_{0}$ under CVS increases because the generation of new dipoles in the high-$\kappa$ dielectric under CVS may cause charge trapping in the high-$\kappa$ dielectric.

• 2011-04-25

著者

• Lee Hi-deok

  Department Of Electronics Engineering Chungnam National University

• Lee Ga-won

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• Han In-shik

  Department Of Electronics Engineering Chungnam National University

• Kwon Hyuk-Min

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Bok Jung-Deuk

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Park Sang-Uk

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Jung Yi-Jung

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Kang Chang-Yong

  International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.

• Shin Hong-Sik

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Lee Byoung-Hun

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea

• Jammy Raj

  International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.

• Lee Hi-Deok

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• KWON Hyuk-Min

  Department of Electronics Engineering, Chungnam National University

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