Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device

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概要

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• The effects of a strained silicon layer on the thermal stability of nickel (germano)silicide for nanoscale complementary metal oxide semiconductor field-effect transistor (CMOSFET) devices are discussed in this study. Three different thicknesses, 5, 13, and 40 nm, of silicon layers on silicon germanium (SiGe) were prepared for this experiment. The effects of the silicidation rapid thermal annealing (RTA) temperature and postsilicidation annealing temperature for the different silicon layer thicknesses were studied. For comparison, a bulk silicon substrate and a SiGe substrate were also used. Silicides with the thin strained silicon layers (5 and 13 nm) on SiGe showed good thermal stability in this study. However, the other silicides using bulk silicon, 40-nm-thick silicon on SiGe, and the SiGe substrate underwent degradation due to silicide agglomeration during annealing. A SiO2 layer was found on the silicide using the SiGe substrate. In this study, several analysis methods such as four-point probe measurement, field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), and Auger electron spectroscopy (AES) were used for detailed study.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-10-25

著者

• Lee Hi-deok

  Department Of Electronics Engineering Chungnam National University

• Lee Won-jae

  Department Of Advanced Materials Engineering Dong-eui University

• Kim Ji-young

  Department Of Environmental Engineering Kumoh National Institute Of Technology

• Jeon Hyeongtag

  Division Of Materials Science & Engineering Hanyang University

• Lee Keunwoo

  Division Of Materials Science And Engineering Hanyang University

• Zhang Ying-Ying

  Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea

• Jung Soon-Yen

  Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea

• Lee Hi-Deok

  Department of Electronics Engineering, Chungnam National University, Gung-dong, Yuseong-gu, Daejeon 305-764, Korea

• Zhang Ying-Ying

  Department of Electronics Engineering, Chungnam National University, Gung-dong, Yuseong-gu, Daejeon 305-764, Korea

• Kim Cho-Rong

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Lee Jaeyeop

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Park Won-Wook

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Leem Jae-Young

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Ryu Hyukhyun

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Korea

• Kim In-Kyum

  R&D Center, Siltron Inc., 283 Imsoo-dong, Gumi, Gyeongbuk 730-724, Korea

• Kang Suk-June

  R&D Center, Siltron Inc., 283 Imsoo-dong, Gumi, Gyeongbuk 730-724, Korea

• Yuk Hyung-Sang

  R&D Center, Siltron Inc., 283 Imsoo-dong, Gumi, Gyeongbuk 730-724, Korea

• Jeon Sunyeol

  Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea

• Kim In-Kyum

  R&D Center, Siltron Inc., 283 Imsoo-dong, Gumi, Gyeongbuk 730-724, Korea

• Kang Suk-June

  R&D Center, Siltron Inc., 283 Imsoo-dong, Gumi, Gyeongbuk 730-724, Korea

• Leem Jae-Young

  Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea

• Lee Won-Jae

  Department of Electronics Engineering, Chungnam National University, Gung-dong, Yuseong-gu, Daejeon 305-764, Korea

• Yuk Hyung-Sang

  R&D Center, Siltron Inc., 283 Imsoo-dong, Gumi, Gyeongbuk 730-724, Korea

• Park Won-Wook

  Department of Nano System Engineering, Inje University, Gimhae, Gyeongnam 621-749, Republic of Korea

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