Comparison of TiN Films Deposited Using Tetrakisdimethylaminotitanium and Tetrakisdiethylaminotitanium by the Atomic Layer Deposition Method
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概要
- 論文の詳細を見る
TiN films were deposited by the atomic layer deposition (ALD) method using either tetrakisdimethylaminotitanium (TDMAT) or tetrakisdiethylaminotitanium (TDEAT) as the Ti precursor and NH3 as the reactant gas. The TiN films deposited using TDMAT showed two saturated TiN film growth regions which were observed in the temperature ranges between 175 and 190°C and between 200 and 210°C. The TiN films deposited using TDEAT showed a saturated growth rate in the temperature range between 275 and 300°C. The growth rates of the TiN films deposited using either TDMAT or TDEAT were about 5 and 1 Å/cycle, respectively. The TiN films grown by the ALD method showed relatively low carbon content compared to the TiN films deposited by other conventional chemical vapor deposition and metalorganic chemical vapor deposition methods using the same precursors. The resistivity of the TiN films deposited by the ALD method was below 1,000 μ$\Omega$$\cdot$cm. The TiN films deposited using TDEAT showed a lower resistivity than the films deposited using TDMAT. The calculated densities of the TiN films deposited using either TDMAT or TDEAT were about 3.55 and 4.38 g/cm3, respectively. This paper presents a comparison of the characteristics of the TiN films deposited using the two different precursors, TDMAT and TDEAT.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Kim Yangdo
School Of Materials Science And Engineering Pusan National University
-
Kim Young
Division Of Applied Plant Science Agricultural Plant Stress Research Center
-
Jeon Hyeongtag
Division Of Materials Science & Engineering Hanyang University
-
Kim Ju
Division Of Cardiology Severance Cardiovascular Hospital Yonsei University College Of Medicine
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Kim Ju
Division of Materials Science and Engineering, Hanyang University, 17, Haengdang-Dong, Seongdong-Gu, Seoul 133-791, Korea
-
Choi Gil
Samsung Electronics Co., LTD. San #24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Jeon Hyeongtag
Division of Materials Science and Engineering, Hanyang University, 17, Haengdang-Dong, Seongdong-Gu, Seoul 133-791, Korea
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