Improved Light Extraction Efficiency of InGaN-Based Light-Emitting Diodes with Patterned $n$-GaN Substrate

概要

論文の詳細を見る
We improved the light extraction efficiency of InGaN-based light-emitting diodes (LEDs) in which an $n$-type GaN layer was patterned onto a sapphire substrate with nano-sized SiO2 columns. Indium tin oxide thin layer deposition on a SiO2 layer followed by wet etching gives rise to oxide self-assembled clusters of 100–400 nm size and a subsequent SiO2 etching with an oxide mask results in SiO2 columns on an $n$-type GaN layer. The output power of the patterned $n$-GaN substrate (PNS) LED shows a 1.33 time increase compared with that of a normal LED without an $n$-GaN pattern when the total output power emitted in all directions from the packaging LED was measured under a current injection of 20 mA. The increase in output power from the PNS LED depends on the size of the SiO2 columns on the $n$-type GaN substrate.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-12-15