InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti3O5/Al2O3 Distributed Bragg Reflector

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概要

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• Here, we report InGaN/AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using distributed Bragg reflectors (DBRs). The DBRs consist of 11 layers of alternating quarter-wave thickness Ti3O5 and Al2O3 deposited onto the indium–tin-oxide ohmic contact layer of a 385 nm UV LED by ion-assisted electron beam evaporation. Numerical calculations showed that the angle averaged reflectivity of the GaN/DBR structure at 385 nm was 12% higher than that of a conventional GaN/Ag structure. The measured light output–current–voltage of the DBR UV LEDs at 20 mA current injection showed an increase of 15% in output power in comparison to a conventional Ag reflector with no degradation in electrical properties. We attributed this light output enhancement to the increased light extraction from the higher DBR reflectivity.

• 2008-12-25

著者

• Lee June

  Department Of Advanced Materials Science And Engineering Sungkyunkwan University

• Park Si-hyun

  Department Of Photonic Engineering Chosun University

• Baek Jong

  Korea Photonics Technology Institute

• JEONG Tak

  Korea Photonics Technology Institute

• Lee Hyun

  Korea Photonics Technology Institute, Gwangju 500-460, Korea

• Lee June

  Department of Materials Science and Engineering, Chonnam National University, Gwanju 500-757, Korea

• Park Si-Hyun

  Department of Photonic Engineering, Chosun University, Gwanju 501-759, Korea

• Park Si-Hyun

  Department of Electronic Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea

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