The Polarity Effect on the Photoelectrochemical Properties of Ga- and N-Face Free-Standing GaN Substrate
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概要
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The band-edge potential and photocurrent density of N-face GaN were experimentally determined to be more negative and greater than those of Ga-face GaN, respectively, in this photoelectrochemical experiment. These results indicate that the N-face GaN could generate much more hydrogen than Ga-face GaN. Although the time dependence of the photocurrent density of N-face GaN was almost constant, that of Ga-face GaN stabilized only after 260 min of reaction time. From these results, we conclude that N-face GaN, which has a more negative band-edge potential and a more stable photocurrent density, could be suitable for higher-photocurrent generation than Ga-face GaN.
- 2013-08-25
著者
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JEONG Tak
Korea Photonics Technology Institute
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Nakamura Akihiro
Department Of Applied Chemistry And Biotechnology Faculty Of Engineering Yamanashi University
-
Ha Jun-seok
School Of Applied Chemical Engineering Chonnam National University
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Lee Hyo-Jong
Materials Science and Engineering, Dong-A University, Busan 604-714, Korea
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Park Hyung-Jo
Korea Photonics Technology Institute, Gwangju 500-460, Korea
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Moon Young
THELEDS Co., Ltd., Gwangju 506-253, Korea
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Jung Ki-Chang
School of Applied Chemical Engineering, Chonnam National University, Gwangju 500-757, Korea
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Fujii Katsushi
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Bae Hyojung
School of Applied Chemical Engineering, Chonnam National University, Gwangju 500-757, Korea
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Park Jaehyoung
School of Applied Chemical Engineering, Chonnam National University, Gwangju 500-757, Korea
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