High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology
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概要
- 論文の詳細を見る
- 2011-06-25
著者
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Lee Seung-jae
Korea Institute Of Energy Research
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Lee Seung-jae
Led Device Team Korea Photonics Technology Institute
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Ju Jin-woo
School Of Advanced Materials Engineering And Research Center For Advanced Materials Development Chon
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Baek Jong
Led Device Team Korea Photonics Technology Institute
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Kim Kang
Korea Institute Of Science And Technology Thermal Flow Control Research Center
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Lee Cheul-ro
School Of Advanced Materials Engineering And Research Center Of Advanced Materials Development Chonb
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Ju Jin-woo
Korea Photonics Technology Institute
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Baek Jong
Korea Photonics Technology Institute
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Kim Kang
Korea Photonics Technology Institute
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JEONG Tak
Korea Photonics Technology Institute
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Kim Kang
Korea Atomic Energy Research Institute
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