Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate
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概要
- 論文の詳細を見る
High-quality GaN epilayers were grown on patterned Si(111) substrates by metalorganic chemical vapor deposition. Crack-free GaN epilayers were obtained by growing the GaN on the plateau of the patterned Si(111) substrate. A high-temperature AlN buffer layer improved the crystalline quality of the GaN epilayer. When the growth temperature of the AlN buffer layer was 1000 °C, the GaN epitaxial layer showed a smooth surface and high crystalline quality. The dislocation density of the subsequently grown GaN layer was $2\times 10^{9}$ cm-2, which is comparable to those of conventional GaN epilayers grown on sapphire substrate.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Lee In-hwan
School Of Advanced Materials Engineering And Research Center For Advanced Materials Development Chon
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Lee Seung-jae
Korea Institute Of Energy Research
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Lee Cheul-ro
School Of Advanced Materials Engineering And Research Center Of Advanced Materials Development Chonb
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Jeon Seong-ran
Korea Photonics Technology Institute
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Baek Jong
Korea Photonics Technology Institute
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Lee Sang
Korea Advanced Institute Of Science And Technology
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Lee In-Hwan
School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD), Engineering College, Chonbuk National University, Jeonju 561-756, Korea
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Lee Seung-Jae
Korea Photonics Technology Institute, Gwangju 500-779, Korea
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Bak Gyu
Korea Photonics Technology Institute, Gwangju 500-779, Korea
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Jung Sung
Korea Photonics Technology Institute, Gwangju 500-779, Korea
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Kim Sang-Mook
Korea Photonics Technology Institute, Gwangju 500-779, Korea
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Leem Shi-Jong
Department of Electronics Engineering, Korea University, Seoul 136-713, Korea
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Jeon Seong-Ran
Korea Photonics Technology Institute, Gwangju 500-779, Korea
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KIM Sang-Mook
Korea Photonics Technology Institute (KOPTI)
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