Nano Gate Dielectrics for Low Voltage Operation of Organic Thin Film Transistors

概要

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Two types of nanometer thick gate dielectrics were employed in order to implement a low voltage operation for organic thin film transistors (OTFT). The first device used an organic monolayer that was formed through a self-assembly process of (benzyloxy)-alkyltrichlorosilane (BTS) on a SiO2 substrate. The BTS-OTFTs produced a threshold voltage of $-0.50\pm 0.11$ V, a mobility of $0.12\pm 0.05$ cm2 V-1 s-1, and a on/off current ratio of $(1.87\pm1.22)\times 10^{2}$. The second type of gate dielectric used self-grown Al2O3, which was directly grown on a pre-existing Al gate electrode by oxygen plasma process. The self-grown Al2O3-OTFTs exhibited a mobility of $0.12\pm 0.015$ cm2 V-1 s1, a threshold voltage of $-1.18\pm 0.027$ V, and an on/off current ratio of $(8.76\pm 5.3)\times 10^{3}$. In particular, as the Al2O3 layer is directly grown on a pre-existing Al gate electrode, an additional patterning process for the gate dielectric is not necessary; thus, the fabrication process is simplified. Furthermore, the process is a low temperature, dry process, thereby allowing for low cost fabrications and flexible applications.
2008-08-25