InGaN-Based Resonant-Cavity Light-Emitting Diodes with a ZrO2/SiO2 Distributed Bragg Reflector and Metal Reflector

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概要

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• We fabricated InGaN-based resonant-cavity light-emitting diodes (RC-LEDs) in which one of the reflectors forming the cavity was made of Ag metal and the other was a ZrO2/SiO2 dielectric distributed Bragg reflector (DBR). Ag metal was deposited onto an InGaN epitaxial layer grown on a sapphire substrate. A ZrO2/SiO2 DBR was deposited onto n-GaN after a Ag/InGaN/sapphire sample was bonded to a silicon substrate using Au bonding metal and the sapphire substrate was removed by a laser lift-off process. Multiple emission modes with a narrowed spectrum were observed with corresponding dips in the reflectance of the resonant cavity, which was examined by microreflectance measurements. The output intensity of the RC-LED was higher than that of a conventional LED and the turn-on voltage increased with a slight decrease in series resistance. The output power of the RC-LED in a $1 \times 1$ mm2 chip increased linearly with the injection of current up to a 500 mA.

• 2010-12-25

著者

• Park Si-hyun

  Department Of Photonic Engineering Chosun University

• Lee Seung-jae

  Korea Institute Of Energy Research

• Kim Jae-hun

  Department Of Electrical And Electronic Eng. Yonsei University

• Lee Seung-Jae

  Korea Photonics Technology Institute, Gwangju 500-460, Korea

• Kim Jae-Hun

  Department of Photonic Engineering, Chosun University, Gwangju 501-759, Korea

• Park Si-Hyun

  Department of Electronic Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea

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