Growth and Characterization of GaN Nano-column Grown on Gallium Coated Si by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
-
Kim D.
Department of Internal Medicine, College of Veternary Medicine, Kangwon national University
-
Kim Dong-wook
School Of Advanced Materials Engineering Engineering College Chonbuk National University
-
Kang Dong-hun
School Of Advanced Materials Engineering Engineering College Chonbuk National University
-
LEE Cheul-Ro
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
-
SANTHAKUMAR Kannappan
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
-
Lee Cheul-ro
School Of Advanced Materials Engineering Engineering College Chonbuk National University
-
Kim D.
Department Of Physics Chungnam National University
-
Lee Cheul-ro
School Of Advanced Materials Engineering And Research Institute Of Advanced Materials Development Ch
-
Lee Cheul-ro
Rcamd Research Center Of Advanced Materials Department School Of Advanced Materials Engineering Engi
-
Kim D.
Department Of Electronics Engineering Kookmin University
-
Santhakumar Kannappan
School Of Advanced Materials Engineering Engineering College Chonbuk National University
-
Lee Cheul-ro
School Of Advanced Materials Engineering And Research Center Of Advanced Materials Development Chonb
関連論文
- Staphylococcus aureusのアルファトキシン, 莢膜多糖(CPS)及び組換型フィブロネクチン結合蛋白(r-FnBP)のウサギにおける免疫応答
- Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by MOCVD
- Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal buffer
- Characteristic comparison of GaN grown on patterned sapphire substrates following growth time
- Fabrication and characterization of In[x]Ga1-xN quantum dots using nitridation of nano-alloyed droplet growth technique (Special issue: Solid state devices and materials)
- Fabrication and Characterization of In_xGa_N Quantum Dots using NNAD Growth Technique
- Growth and Characterization of GaN Nano-column Grown on Gallium Coated Si by Molecular Beam Epitaxy
- Growth of InN on patterned sapphire substrates and its characterization
- Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice
- Characteristics of back illumination type UV photodetector fabricated by Al_xGa_N heterostructure
- Growth of vertical GaN Nano-Column on Au Droplet/Si(111) Substrate using Pulsed Flow MOCVD Method
- Influence of Sustain Pulse-Width on Electrical Characteristics and Luminous Efficiency in Surface Discharge of AC-PDP
- Nanocrystalline Icosahedral Phase Formation in Melt Spun Ti-Zr-Ni Alloys
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2" MOCVD System
- High brightness InGaN/GaN blue LED realized by a 2''×6 MOCVD system
- Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion
- MC-35 IMPROVEMENT OF DYNAMIC CHARACTERISTICS OF A HDD SPINDLE SYSTEM SUPPORTED BY BALL BEARING DUE TO TEMPERATURE VARIATION
- Characteristic comparision of GaN epitaxy grown on patterned and unpatterned Si(111)
- Fabrication and Beta-Ray Source Test of Double-Sided Silicon Strip Sensor
- Observation of Resonances by Individual Energy Levels in InGaAs/AlAs Triple Barrier Resonant Tunneling Diodes
- Nondifferentiable Multiobjective Fractional Programming Problems under Generalized Convexity(Nonlinear Analysis and Convex Analysis)
- High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology
- IS-3 AN IMMUNOHISTOCHEMICAL STUDY OF OVEREXPRESSION OF p53 AND c-erbB-2 ONCOGENE IN CERVICAL CANCER
- Underlying Scale-Free Trees in Complex Networks
- Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides
- GaN Nanowires with $\text{Au}+\text{Ga}$ Solid Solution Grown on an Si(111) Substrate by Metalorganic Chemical Vapor Deposition
- InN Nanocolumns Grown on a Si(111) Substrate Using Au+In Solid Solution by Metal Organic Chemical Vapor Deposition
- 3-4. Intestinal atresia in very low-birth-weight neonates
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a $6\times 2''$ MOCVD System
- Self-Assembled GaN Nano-Column Grown on Si(111) Substrate Using Au+Ga Alloy Seeding Method by Metalorganic Chemical Vapor Deposition
- Fabrication and Characterization of InxGa1-xN Quantum Dots Using Nitridation of Nano-alloyed Droplet Growth Technique
- Characteristic Comparison of GaN Grown on Patterned Sapphire Substrates Following Growth Time
- Characteristics of Back-illumination UV Photodetector Fabricated with AlxGa1-xN Heterostructure
- Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate
- Molecular Inflammation as an Underlying Mechanism of the Aging Process and Age-related Diseases