High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2" MOCVD System
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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LEE In-Hwan
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
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LEE Cheul-Ro
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
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Lee In-hwan
School Of Advanced Materials Engineering And Research Institute Of Advanced Materials Development Ch
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Lee Young
Sysnex Co. Ltd.
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JU Jin-Woo
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
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BAEK Jong-Hyeob
Center of Technology Strategy Development, Korea Photonics Technology Institute
関連論文
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- Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal buffer
- Characteristic comparison of GaN grown on patterned sapphire substrates following growth time
- Fabrication and Characterization of In_xGa_N Quantum Dots using NNAD Growth Technique
- Growth and Characterization of GaN Nano-column Grown on Gallium Coated Si by Molecular Beam Epitaxy
- Growth of InN on patterned sapphire substrates and its characterization
- Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice
- Characteristics of back illumination type UV photodetector fabricated by Al_xGa_N heterostructure
- Growth of vertical GaN Nano-Column on Au Droplet/Si(111) Substrate using Pulsed Flow MOCVD Method
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2" MOCVD System
- High brightness InGaN/GaN blue LED realized by a 2''×6 MOCVD system
- Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion
- Multiwavelength emitting InGaN/GaN quantum well grown on V-shaped GaN (1101) microfacet
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a $6\times 2''$ MOCVD System