Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal buffer
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Kim Dong-wook
School Of Advanced Materials Engineering Engineering College Chonbuk National University
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SHIM Byung-Young
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
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KO Eun-A
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
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LEE In-Hwan
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
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LEE Cheul-Ro
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
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LEE In-Whan
School of Advanced Materials Engineering, Engineering College, Chonbuk National University
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Lee In-hwan
School Of Advanced Materials Engineering Engineering College Chonbuk National University
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Lee Cheul-ro
School Of Advanced Materials Engineering Engineering College Chonbuk National University
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Lee In-whan
School Of Advanced Materials Engineering Engineering College Chonbuk National University
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Lee Cheul-ro
School Of Advanced Materials Engineering And Research Institute Of Advanced Materials Development Ch
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Lee Cheul-ro
Rcamd Research Center Of Advanced Materials Department School Of Advanced Materials Engineering Engi
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Ko Eun-a
School Of Advanced Materials Engineering Engineering College Chonbuk National University
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Shim Byung-young
School Of Advanced Materials Engineering Engineering College Chonbuk National University
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Lee Cheul-ro
School Of Advanced Materials Engineering And Research Center Of Advanced Materials Development Chonb
関連論文
- Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by MOCVD
- Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal buffer
- Characteristic comparison of GaN grown on patterned sapphire substrates following growth time
- Fabrication and characterization of In[x]Ga1-xN quantum dots using nitridation of nano-alloyed droplet growth technique (Special issue: Solid state devices and materials)
- Fabrication and Characterization of In_xGa_N Quantum Dots using NNAD Growth Technique
- Growth and Characterization of GaN Nano-column Grown on Gallium Coated Si by Molecular Beam Epitaxy
- Growth of InN on patterned sapphire substrates and its characterization
- Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice
- Characteristics of back illumination type UV photodetector fabricated by Al_xGa_N heterostructure
- Growth of vertical GaN Nano-Column on Au Droplet/Si(111) Substrate using Pulsed Flow MOCVD Method
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2" MOCVD System
- High brightness InGaN/GaN blue LED realized by a 2''×6 MOCVD system
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- Characteristics of Back-illumination UV Photodetector Fabricated with Al_xGa_N Heterostructure
- Multiwavelength emitting InGaN/GaN quantum well grown on V-shaped GaN (1101) microfacet
- Characteristic comparision of GaN epitaxy grown on patterned and unpatterned Si(111)
- High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology
- GaN Nanowires with $\text{Au}+\text{Ga}$ Solid Solution Grown on an Si(111) Substrate by Metalorganic Chemical Vapor Deposition
- InN Nanocolumns Grown on a Si(111) Substrate Using Au+In Solid Solution by Metal Organic Chemical Vapor Deposition
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a $6\times 2''$ MOCVD System
- Self-Assembled GaN Nano-Column Grown on Si(111) Substrate Using Au+Ga Alloy Seeding Method by Metalorganic Chemical Vapor Deposition
- Fabrication and Characterization of InxGa1-xN Quantum Dots Using Nitridation of Nano-alloyed Droplet Growth Technique
- Characteristic Comparison of GaN Grown on Patterned Sapphire Substrates Following Growth Time
- Characteristics of Back-illumination UV Photodetector Fabricated with AlxGa1-xN Heterostructure
- Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate