Characteristics of Back-illumination UV Photodetector Fabricated with Al_xGa_<1-x>N Heterostructure
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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CHAE Kyong-Seok
RCAMD Research Center of Advanced Materials Development, School of Advanced Materials Engineering, E
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LEE In-Hwan
RCAMD Research Center of Advanced Materials Development, School of Advanced Materials Engineering, E
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LEE Cheul-Ro
RCAMD Research Center of Advanced Materials Development, School of Advanced Materials Engineering, E
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Lee In-hwan
School Of Advanced Materials Engineering Engineering College Chonbuk National University
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Ahn Haeng-keun
Rcamd Research Center Of Advanced Materials Development School Of Advanced Materials Engineering Eng
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BAEK Byung-Joon
RCAMD, Research Center of Advanced Materials Development, School of Advanced Materials Engineering,
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SEOL Kyeong-Won
RCAMD, Research Center of Advanced Materials Development, School of Advanced Materials Engineering,
関連論文
- Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by MOCVD
- Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal buffer
- Growth of InN on patterned sapphire substrates and its characterization
- Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice
- Characteristics of back illumination type UV photodetector fabricated by Al_xGa_N heterostructure
- Characteristics of Back-illumination UV Photodetector Fabricated with Al_xGa_N Heterostructure
- Characteristic comparision of GaN epitaxy grown on patterned and unpatterned Si(111)
- Characteristics of Back-illumination UV Photodetector Fabricated with AlxGa1-xN Heterostructure