LEE In-Hwan | School of Advanced Materials Engineering, Engineering College, Chonbuk National University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by MOCVD
Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal buffer
Growth of InN on patterned sapphire substrates and its characterization
Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice
Characteristics of back illumination type UV photodetector fabricated by Al_xGa_N heterostructure
High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2" MOCVD System
High brightness InGaN/GaN blue LED realized by a 2''×6 MOCVD system
Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion
Multiwavelength emitting InGaN/GaN quantum well grown on V-shaped GaN (1101) microfacet

スポンサーリンク