High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a $6\times 2''$ MOCVD System
スポンサーリンク
概要
- 論文の詳細を見る
We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2 nm, respectively. The epoxy molded LED lamp showed radiant power of 4 mW at a forward current of 20 mA. We note that the power is very high considering such a simple LED structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
-
Lee In-hwan
School Of Advanced Materials Engineering And Research Center For Advanced Materials Development Chon
-
Lee Young
Sysnex Co. Ltd.
-
Ju Jin-woo
School Of Advanced Materials Engineering And Research Center For Advanced Materials Development Chon
-
Baek Jong-hyeob
Center Of Technology Strategy Development Korea Photonics Technology Institute
-
Lee Cheul-ro
School Of Advanced Materials Engineering And Research Center Of Advanced Materials Development Chonb
-
Ju Jin-Woo
School of Advanced Materials Engineering, Engineering College, Chonbuk National University, Chonju 561-756, Korea
-
Lee In-Hwan
School of Advanced Materials Engineering, Engineering College, Chonbuk National University, Chonju 561-756, Korea
-
Lee Cheul-Ro
School of Advanced Materials Engineering, Engineering College, Chonbuk National University, Chonju 561-756, Korea
-
Baek Jong-Hyeob
Center of Technology Strategy Development, Korea Photonics Technology Institute, Gwangju 500-210, Korea
-
Lee Young
Sysnex Co., Ltd., 439-2, Sangdae-Dong, Daejeon 305-313, Korea
関連論文
- Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by MOCVD
- Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal buffer
- Characteristic comparison of GaN grown on patterned sapphire substrates following growth time
- Fabrication and Characterization of In_xGa_N Quantum Dots using NNAD Growth Technique
- Growth and Characterization of GaN Nano-column Grown on Gallium Coated Si by Molecular Beam Epitaxy
- Growth of InN on patterned sapphire substrates and its characterization
- Growth of vertical GaN Nano-Column on Au Droplet/Si(111) Substrate using Pulsed Flow MOCVD Method
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2" MOCVD System
- High brightness InGaN/GaN blue LED realized by a 2''×6 MOCVD system
- Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion
- Multiwavelength emitting InGaN/GaN quantum well grown on V-shaped GaN (1101) microfacet
- High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology
- GaN Nanowires with $\text{Au}+\text{Ga}$ Solid Solution Grown on an Si(111) Substrate by Metalorganic Chemical Vapor Deposition
- InN Nanocolumns Grown on a Si(111) Substrate Using Au+In Solid Solution by Metal Organic Chemical Vapor Deposition
- Exposure Time Variation Method Using DMD for Microstereolithography
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a $6\times 2''$ MOCVD System
- Self-Assembled GaN Nano-Column Grown on Si(111) Substrate Using Au+Ga Alloy Seeding Method by Metalorganic Chemical Vapor Deposition
- Fabrication and Characterization of InxGa1-xN Quantum Dots Using Nitridation of Nano-alloyed Droplet Growth Technique
- Characteristic Comparison of GaN Grown on Patterned Sapphire Substrates Following Growth Time
- Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate
- Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching
- Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching