Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching
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概要
- 論文の詳細を見る
A free-standing GaN layer was produced by combining electrochemical (EC) etching from the front surface, photo-electrochemical (PEC) etching from the back surface, and subsequent regrowth of GaN on the porous template thus produced. The EC etching resulted in the formation of etch channels on the surface portion of the starting film, whereas the back-side PEC etching gave rise to a columnar structure supporting the entire film. When the n-GaN layer was regrown on such template, the underlying columnar structure provided weak places for easy separation and transfer of the film by mechanical bonding.
- 2013-06-25
著者
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Lee In-hwan
School Of Advanced Materials Engineering And Research Center For Advanced Materials Development Chon
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Jang Lee-woon
School Of Advanced Materials Engineering And Research Center For Advanced Materials Development Chon
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Cho Han-Su
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Jeon Dae-Woo
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Ju Jin-Woo
LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Korea
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Jo Dong-Seob
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Polyakov Alexander
Institue of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5, Russia
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Yun Jin-Hyeon
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Baek Jong-Hyeob
LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Korea
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- Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching
- Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching