Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching
スポンサーリンク
概要
著者
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Lee In-hwan
School Of Advanced Materials Engineering And Research Center For Advanced Materials Development Chon
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Jang Lee-woon
School Of Advanced Materials Engineering And Research Center For Advanced Materials Development Chon
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Cho Han-Su
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Jeon Dae-Woo
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Ju Jin-Woo
LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Korea
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Lee In-Hwan
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Jang Lee-Woon
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Jo Dong-Seob
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Polyakov Alexander
Institue of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5, Russia
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Yun Jin-Hyeon
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea
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Baek Jong-Hyeob
LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Korea
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CHO Han-Su
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University
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JU Jin-Woo
LED Device Research Center, Korea Photonics Technology Institute
関連論文
- Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by MOCVD
- Growth of InN on patterned sapphire substrates and its characterization
- High brightness InGaN/GaN blue LED realized by a 2''×6 MOCVD system
- Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion
- Multiwavelength emitting InGaN/GaN quantum well grown on V-shaped GaN (1101) microfacet
- GaN Nanowires with $\text{Au}+\text{Ga}$ Solid Solution Grown on an Si(111) Substrate by Metalorganic Chemical Vapor Deposition
- InN Nanocolumns Grown on a Si(111) Substrate Using Au+In Solid Solution by Metal Organic Chemical Vapor Deposition
- Exposure Time Variation Method Using DMD for Microstereolithography
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a $6\times 2''$ MOCVD System
- Self-Assembled GaN Nano-Column Grown on Si(111) Substrate Using Au+Ga Alloy Seeding Method by Metalorganic Chemical Vapor Deposition
- Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate
- Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching
- Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching