Investigation of Strained Multi-Quantum Well Structures for High Bright AlGaInP-Based Light Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
We have investigated the effects of well strain on optical and device characteristics of AlGaInP-based multi-quantum well (MQW) light-emitting diodes (LEDs) according to the variation of well strain and the corresponding change of well thickness in order to maintain the operating wavelengths. As the compressive well strain increased from +0.04 to +0.41% and the corresponding well thickness decreased from 7.2 to 4.5 nm, the relative photoluminescence (PL) intensity increased from 1.0 to 1.21, and the radiative carrier lifetime measured from the time-resolved PL (TRPL) was shortened from 4.43 to 1.77 ns. The compressive well strain may cause the strain-induced heavy-hole-assisted recombination process, followed by reduction of the radiative decay time due to a reduced effective-heavy-hole mass. In addition, a thinner well thickness may enhance the spatial carrier confinement in the well regions, which greatly improved light output power of the LEDs.
- 2009-07-25
著者
-
Lee June
Department Of Advanced Materials Science And Engineering Sungkyunkwan University
-
KWAK Joon
Department of Metallurgical Engineering, Yonsei University
-
Baek Jong
Led Device Team Korea Photonics Technology Institute
-
Cho Yong
National Fisheries Research And Development Agency
-
Oh Hwa
LED Device Team, Korea Photonics Technology Institute, Gwangju 500-460, Korea
-
Joo Jee
LED Device Team, Korea Photonics Technology Institute, Gwangju 500-460, Korea
-
Lee Jin
LED Device Team, Korea Photonics Technology Institute, Gwangju 500-460, Korea
-
Lee Sun
National Research Laboratory for Nano-Bio-Photonics, Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
-
Lee June
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
-
Kwak Joon
Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam 540-742, Korea
-
Baek Jong
LED Device Team, Korea Photonics Technology Institute, Gwangju 500-460, Korea
関連論文
- Deposition of SiO_2 by Plasma Enhanced Chemical Vapor Deposition as the Diffusion Barrier to Polymer Substrates
- Characteristics of Organic Light-Emitting Devices by the Surface Treatment of Indium Tin Oxide Surfaces Using Atmospheric Pressure Plasmas
- Characteristics of a Multilayer SiO_x(CH)_yN_z Film Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition Using Hexamethyldisilazane/Ar/N_2O
- Brassinolide and [26, 28-^2H_6] Brassinolide Are Differently Demethylated by Loss of C-26 and C-28, Respectively, in Marchantia polymorpha
- Hormonal Cross-Talk Between Auxin and Ethylene Differentially Regulates the Expression of Two Members of the 1-Aminocyclopropane-1-Carboxylate Oxidase Gene Family in Rice(Oryza sativa L.)
- High Efficiency White Organic Light-Emitting Diodes from One Emissive Layer
- Effect of Indium-Oxide Deposited Using an Oxygen Ion-Beam-Assisted-Deposition to Top-Emitting Organic Light-Emitting Diodes
- Effect of Penetration Depth on Electrical Properties in Pd/Ge/Ti/Au Ohmic Contact to High-Low-Doped n-GaAs
- Polar Transport of ^Ca^ across the Elongation Zone of Gravistimulated Roots
- Inhibition of Auxin-Induced Ethylene Production by Lycoricidinol
- Recurrent hepatocellular carcinoma after spontaneous regression
- B-19 Surgical outcome for intractable epilepsy with cortical dysplasia
- Pd-Ge-Au Based Hybrid Ohmic Contacts to High-Low Doped GaAs Field-Effect Transistor
- Multiwavelength emitting InGaN/GaN quantum well grown on V-shaped GaN (1101) microfacet
- RAPD identification of genetic variation in seaweed Hizikia fusiformis(Fucales, Phaeophyta)
- Structural Optimization of High-Power AlGaInP Resonant Cavity Light-Emitting Diodes for Visible Light Communications
- Formation of Thermally Stable AgCu-Based Reflectors by a Two Step Alloy Method for Vertical Light-Emitting Diodes
- High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology
- InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti3O5/Al2O3 Distributed Bragg Reflector
- Effect of Isopropyl Alcohol Addition in Ozonated Water on the Corrosion of Tungsten Film
- Investigation of Strained Multi-Quantum Well Structures for High Bright AlGaInP-Based Light Emitting Diodes
- Novel Ir–Ti Alloy Electrodes for High-Density Ferroelectric Memory Applications
- Characteristics of a Multilayer SiOx(CH)yNz Film Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition Using Hexamethyldisilazane/Ar/N2O
- Deposition of SiO2 by Plasma Enhanced Chemical Vapor Deposition as the Diffusion Barrier to Polymer Substrates
- Study on the O2 Plasma Treatment of Indium Tin Oxide for Organic Light Emitting Diodes Using Inductively Coupled Plasma
- Stress Engineering by Controlling Sapphire Substrate Thickness in 520 nm GaN-Based Light-Emitting Diodes
- The Efficacy of Hydroxyapatite for Screw Augmentation in Osteoporotic Patients
- Effect of Penetration Depth on Electrical Properties in Pd/Ge/Ti/Au Ohmic Contact to High-Low-Doped n-GaAs
- Radiation Exposure to the Surgeon During Percutaneous Endoscopic Lumbar Discectomy : A Prospective Study