Lee June | Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
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概要
- Lee June Keyの詳細を見る
- 同名の論文著者
- Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Koreaの論文著者
関連著者
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Lee June
Department Of Advanced Materials Science And Engineering Sungkyunkwan University
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Lee June
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
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KWAK Joon
Department of Metallurgical Engineering, Yonsei University
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Baek Jong
Led Device Team Korea Photonics Technology Institute
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Cho Yong
National Fisheries Research And Development Agency
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JEONG Tak
Korea Photonics Technology Institute
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Oh Hwa
LED Device Team, Korea Photonics Technology Institute, Gwangju 500-460, Korea
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Joo Jee
LED Device Team, Korea Photonics Technology Institute, Gwangju 500-460, Korea
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Lee Jin
LED Device Team, Korea Photonics Technology Institute, Gwangju 500-460, Korea
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Lee Sun
National Research Laboratory for Nano-Bio-Photonics, Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Yang Seung
Department of Chemical and Biomolecular Engineering, Energy and Environment Engineering Center, Korea Advanced Institute of Science and Technology, Guseong-dong, Yuseong-gu, Daejon 305-701, Republic of Korea
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Kwak Joon
Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam 540-742, Korea
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Baek Jong
LED Device Team, Korea Photonics Technology Institute, Gwangju 500-460, Korea
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Tawfik Wael
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
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Bae Seo-Jung
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
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Yang Seung
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
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Jeong Tak
Korea Photonics Technology Institute, Gwangju 500-757, Korea
著作論文
- Investigation of Strained Multi-Quantum Well Structures for High Bright AlGaInP-Based Light Emitting Diodes
- Stress Engineering by Controlling Sapphire Substrate Thickness in 520 nm GaN-Based Light-Emitting Diodes