Effect of Penetration Depth on Electrical Properties in Pd/Ge/Ti/Au Ohmic Contact to High-Low-Doped n-GaAs
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概要
- 論文の詳細を見る
Penetration depth of Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300° C, but penetrate deeper than 1000 Å into GaAs at 380° C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380° C results in the lowest contact resistance of 0.43 Ω mm due to direct contact of ohmic metals with the buried high-doped GaAs layer.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-07-15
著者
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Shin Dong
Department Of Agricultural Chemistry The University Of Tokyo
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Kim Haecheon
Semiconductor Technology Division Etri
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Lee Jong-lam
Department Of Materials Science And Engineering Pohang University Of Science And Technology (postech
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Park Chan
Department Of Anatomy College Of Medicine Kyung Hee University
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Kwak Joon
Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam 540-742, Korea
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Baik Hong
Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea
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Baik Hong
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
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Lee Jong-Lam
Department of Materials Science and Engineering, POSTECH, Pohang 790-784, Korea
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Kwak Joon
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
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Kim Haecheon
Semiconductor Technology Division, ETRI, Deajon 305-606, Korea
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Shin Dong
Department of Materials Science and Engineering, POSTECH, Pohang 790-784, Korea
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