Formation of Nickel Silicide Layer on Strained-Si0.83Ge0.17/Si(001) using a Sacrificial Si Layer and its Morphological Instability
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概要
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Nickel silicide was formed on strained-Si0.83Ge0.17/Si(001) using a sacrificial Si capping (cap-Si) layer and its morphological characteristics were investigated. Nickel silicide layers were grown by rapid thermal annealing of the samples with the structure of Ni ($\cong 14$ nm)/cap-Si ($\cong 26$ nm)/Si0.83Ge0.17/Si(001) at the annealing temperature ($T_{\text{A}}$) range of 400–800°C. The phase formation, surface and interfacial morphologies, and electrical properties of the resulting samples were characterized by various measurement techniques, including X-ray diffraction, atomic force microscopy, scanning electron microscopy, Auger electron spectroscopy, cross-sectional transmission electron microscopy, and the four-point probe method. The results showed the formation of a uniform layer nickel monosilicide (NiSi) with a thickness of ${\cong}30$ nm at 400–550°C and sheet resistance values of 6.5–7.9 $\Omega$/$\square$. The sheet resistance values of the samples annealed at $T_{\text{A}}\geq 600$°C were found to be increased, however, and this is attributed to the agglomeration of nickel monosilicide leading to discrete large-size NiSi grains. Microstructural and chemical analyses of the samples annealed at elevated temperature, $T_{\text{A}}\geq 750$°C, indicated the formation of large agglomerated NiSi grains penetrating into the Si0.83Ge0.17/Si(001) structure and the conversion of the cap-Si layer situated in between the nickel silicide grains into an Sil-uGeu layer ($u \cong 0.01--0.03$), due to the out-diffusion of Ge from the SiGe layer during agglomeration. However, no NiSi2 phase was observed at these elevated annealing temperatures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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Shin Dong
Department Of Agricultural Chemistry The University Of Tokyo
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Jang Chi
Department Of Materials Engineering And Center For Advanced Plasma Surface Technology Sungkyunkwan U
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Shim Kyu-hwan
Semiconductor Division Electronics And Telecommunications Research Institute
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Baik Sung
School Of Materials Science And Engineering Seoul National University
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Lee Nae-eung
Department Of Materials Engineering And Center For Advanced Plasma Surface Technolog Sungkyunkwan Un
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Kim Young-woon
School Of Materials Science And Engineering Seoul National University
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Song Young-joo
Semiconductor Division Electronics And Telecommunications Research Institute
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Shim Kyu-Hwan
Semiconductor Physics Research Center, Chonbuk National University, 664-14 Deokjindong, Deokjinku, Jeonju 561-756, Korea
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Baik Sung
School of Materials Science and Engineering, Seoul National University, San 56-1, Gwanak-gu, Seoul 151-742, Korea
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Song Young-Joo
Semiconductor Division, Electronics and Telecommunications Research Institute, Taejeon 305-701, Korea
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Jang Chi
Department of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea
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