Formation of Nickel Silicide Layer on Strained-Si_<0.83>Ge_<0.17>/Si(001) using a Sacrificial Si Layer and its Morphological Instability
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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Shin Dong
Department of Anatomy, Ajou University School of Medicine
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Jang Chi
Department Of Materials Engineering And Center For Advanced Plasma Surface Technology Sungkyunkwan U
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Shim Kyu-hwan
Semiconductor Physics Research Center Chonbuk National University
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Baik Sung
School Of Materials Science And Engineering Seoul National University
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LEE Nae-Eung
Department of Materials Engineering and Center for Advanced Plasma Surface Technolog, Sungkyunkwan U
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Kim Young-woon
School Of Materials Science And Engineering Seoul National University
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SONG Young-Joo
Semiconductor Division, Electronics and Telecommunications Research Institute
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