Formation and Properties of Epitaxial CoSi_2 Layers on p-Si_<0.83>Ge_<0.17>/p-Si(001) using a Si Capping Layer by Metal-Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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AHN Young
Department of Internal Medicine, Chonnam National University Hospital
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Shin Dong
Department of Anatomy, Ajou University School of Medicine
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AHN Byung
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
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Shim Kyu-hwan
Semiconductor Physics Research Center Chonbuk National University
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Shin Dong
Department Of Materials Engineering And Center For Advanced Plasma Surface Technology Sungkyunkwan U
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Ban Sang
Department Of Materials Engineering And Center For Advanced Plasma Surface Technology Sungkyunkwan U
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LEE Nac-Eung
Department of Materials Engineering and Center for Advanced Plasma Surface Technology, SungKyunKwan
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